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PBHV9040T
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 02 -- 15 January 2009 Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T.
1.2 Features
I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified
1.3 Applications
I I I I I I I Electronic ballast for fluorescent lighting LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch mode power supply
1.4 Quick reference data
Table 1. Symbol VCESM VCEO IC hFE Quick reference data Parameter collector-emitter peak voltage collector-emitter voltage collector current DC current gain VCE = -10 V; IC = -50 mA Conditions VBE = 0 V open base Min 100 Typ 200 Max -500 -400 Unit V V
-0.25 A
NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description base emitter collector
1 2 2
sym013
Simplified outline
3
Graphic symbol
3 1
3. Ordering information
Table 3. Ordering information Package Name PBHV9040T Description plastic surface-mounted package; 3 leads Version SOT23 Type number
4. Marking
Table 4. Marking codes Marking code[1] W5* Type number PBHV9040T
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
PBHV9040T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 January 2009
2 of 12
NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VCESM VEBO IC ICM IBM Ptot Tj Tamb Tstg
[1]
Parameter collector-base voltage collector-emitter voltage collector-emitter peak voltage emitter-base voltage collector current peak collector current peak base current total power dissipation junction temperature ambient temperature storage temperature
Conditions open emitter open base VBE = 0 V open collector single pulse; tp 1 ms single pulse; tp 1 ms Tamb 25 C
[1]
Min -
Max -500 -400 -500 -6 -0.25 -0.5 -200 300
Unit V V V V A A mA mW C C C
-55 -65
150 +150 +150
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
400 Ptot (mW) 300
006aab150
200
100
0 -75
-25
25
75
125 175 Tamb (C)
FR4 PCB, standard footprint
Fig 1.
Power derating curve
PBHV9040T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 January 2009
3 of 12
NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Rth(j-sp)
[1]
Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air
[1]
Min -
Typ -
Max 417 70
Unit K/W K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01
006aab151
1
0
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV9040T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 January 2009
4 of 12
NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain Conditions VCB = -320 V; IE = 0 A VCB = -320 V; IE = 0 A; Tj = 150 C VCE = -320 V; VBE = 0 V VEB = -4 V; IC = 0 A VCE = -10 V IC = -50 mA IC = -100 mA IC = -250 mA VCEsat VBEsat fT Cc Ce td tr ton ts tf toff
[1]
[1]
Min -
Typ -
Max -100 -10 -100 -100
Unit nA A nA nA
ICES IEBO hFE
100 80 10 [1]
200 200 25 -110 -1 55 7 150 9 1810 1819 715 1085 1800
-200 -1.1 mV V MHz pF pF ns ns ns ns ns ns
collector-emitter saturation voltage base-emitter saturation voltage transition frequency collector capacitance emitter capacitance delay time rise time turn-on time storage time fall time turn-off time
IC = -100 mA; IB = -20 mA IC = -100 mA; IB = -20 mA VCE = -10 V; IE = -10 mA; f = 100 MHz VCB = -20 V; IE = ie = 0 A; f = 1 MHz VEB = -0.5 V; IC = ic = 0 A; f = 1 MHz VCC = -2 V; IC = -0.15 A; IBon = -0.03 A; IBoff = 0.03 A
-
Pulse test: tp 300 s; 0.02.
PBHV9040T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 January 2009
5 of 12
NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
400 hFE 300
(1)
006aab182
-0.5 IC (A) -0.4
006aab183
IB (mA) = -140 -126 -112 -84 -98 -70
-0.3 200
(2)
-56 -42 -28 -14
-0.2
(3)
100
-0.1
0 -10-1
-1
-10
-102 IC (mA)
-103
0 0
-1
-2
-3
-4 -5 VCE (V)
VCE = -10 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C
Fig 3.
DC current gain as a function of collector current; typical values
006aab184
Fig 4.
Collector current as a function of collector-emitter voltage; typical values
006aab185
-1.2 VBE (V) -0.8
(1)
-1.3 VBEsat (V) -0.9
(1) (2) (3)
(2) (3)
-0.4
-0.5
0 -10-1
-1
-10
-102 IC (mA)
-103
-0.1 -10-1
-1
-10
-102
-103 -104 IC (mA)
VCE = -10 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
IC/IB = 5 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 5.
Base-emitter voltage as a function of collector current; typical values
Fig 6.
Base-emitter saturation voltage as a function of collector current; typical values
PBHV9040T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 January 2009
6 of 12
NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
-10 VCEsat (V) -1
006aab186
-10 VCEsat (V) -1
006aab187
-10-1
(1) (2) (3)
(1)
-10-1
(2) (3)
-10-2 -10-1
-1
-10
-102 IC (mA)
-103
-10-2 -10-1
-1
-10
-102 IC (mA)
-103
IC/IB = 5 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 20 (2) IC/IB = 10 (3) IC/IB = 5
Fig 7.
Collector-emitter saturation voltage as a function of collector current; typical values
006aab188
Fig 8.
Collector-emitter saturation voltage as a function of collector current; typical values
006aab189
104 RCEsat () 103
104 RCEsat () 103
102
102
10
(1) (2) (3)
10
(1) (2)
1
1
(3)
10-1 10-1
-1
-10
-102 IC (mA)
-103
10-1 10-1
-1
-10
-102 IC (mA)
-103
IC/IB = 5 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 20 (2) IC/IB = 10 (3) IC/IB = 5
Fig 9.
Collector-emitter saturation resistance as a function of collector current; typical values
Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values
PBHV9040T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 January 2009
7 of 12
NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
8. Test information
VBB VCC
RB oscilloscope VI R1 (probe) 450 R2
RC Vo (probe) 450 DUT oscilloscope
mgd624
Fig 11. Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
9. Package outline
3.0 2.8
3
1.1 0.9
0.45 0.15 2.5 1.4 2.1 1.2
1
2
1.9 Dimensions in mm
0.48 0.38
0.15 0.09 04-11-04
Fig 12. Package outline SOT23 (TO-236AB)
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBHV9040T
[1]
PBHV9040T_2
Package SOT23
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -215 10000 -235
For further information and the availability of packing methods, see Section 14.
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 January 2009
8 of 12
NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
11. Soldering
3.3 2.9 1.9
solder lands solder resist 3 1.7 2 solder paste 0.6 (3x) occupied area Dimensions in mm 0.5 (3x) 0.6 (3x) 1
sot023_fr
0.7 (3x)
Fig 13. Reflow soldering footprint SOT23 (TO-236AB)
2.2 1.2 (2x)
1.4 (2x) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4
preferred transport direction during soldering 2.8 4.5
sot023_fw
Fig 14. Wave soldering footprint SOT23 (TO-236AB)
PBHV9040T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 January 2009
9 of 12
NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history Release date 20090115 Data sheet status Product data sheet Change notice Supersedes PBHV9040T_1 Document ID PBHV9040T_2 Modifications:
* * *
Table 5: IBM value changed from -100 mA to -200 mA Table 7: toff value amended to 1800 ns Section 13 "Legal information": updated Product data sheet -
PBHV9040T_1
20080212
PBHV9040T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 January 2009
10 of 12
NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PBHV9040T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 15 January 2009
11 of 12
NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 15 January 2009 Document identifier: PBHV9040T_2

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